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HM3N150A

Powerswitchcircuitofadaptorandcharger.

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM3N150F

N-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ISH3N150

iscN-ChannelMOSFETTransistor

·FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS:1500V(Min) ·StaticDrain-SourceOn-ResistanceRDS(on):

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA3N150HV

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTH3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH3N150

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTJ3N150

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ3N150M

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ3N150M

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=178A@TC=25℃ ·DrainSourceVoltage -VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V ·AvalancheRated ·FastIntrinsicDiode APPLICATIONS ·EasytoMount ·SpaceSavings ·HighPowerDensity

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NCE3N150

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150D

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150F

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150PF

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150T

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

STFV3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFW3N150

N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFW3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpower

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP3N150

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST/意法
23+
TO-3PF
10500
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)
ST
22+
TO-3PF
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價(jià)
SOT-153
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價(jià)
Mini-circuits
18+
原廠原裝
6000
專注Mini射頻微波全系列,只做原裝正品,現(xiàn)貨庫存
詢價(jià)
MINI
24+
SMD
3600
MINI專營品牌全新原裝正品假一賠十
詢價(jià)
MINI
三年內(nèi)
1983
只做原裝正品
詢價(jià)
Mini-Circuits
2023+
FF704
85
專業(yè)銷售MINI電子元件,常年備有大量庫存
詢價(jià)
MINI
24+
9000
原裝現(xiàn)貨假一賠十
詢價(jià)
MINI
22+
NA
5000
只做原裝,價(jià)格優(yōu)惠,長期供貨。
詢價(jià)
Mini-circ
24+
SMD
3200
進(jìn)口原裝假一賠百
詢價(jià)
更多FW3N150供應(yīng)商 更新時(shí)間2025-1-8 11:09:00