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FXT453

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *100VoltVCEO *1Ampcontinuouscurrent *Ptot=1Watt

Zetex

Zetex Semiconductors

GL453

BIDIRECTIONALEMISSIONTYPEINFRAREDLIGHTEMITTINGDIODE

BidirectionalEmissionTypeInfraredLightEmittingDiode Applications 1.Lightsourcefortape-enddetectorsofVHStypeVCRs

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

GL453

BidirectionalEmissionTypeInfraredEmittingDiode

BidirectionalEmissionTypeInfraredLightEmittingDiode Applications 1.Lightsourcefortape-enddetectorsofVHStypeVCRs

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

HCPL-M453

SmallOutline,5Lead,HighSpeedOptocouplers

Description ThesesmalloutlinehighCMR,highspeed,diode-transistoroptocouplersaresinglechanneldevicesinafiveleadminiaturefootprint.TheyareelectricallyequivalenttothefollowingAgilentoptocouplers: TheSO-5JEDECregistered(MO-155)packageoutlinedoesnotrequire“through

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

HWS453

GaAsDC-6GHzDPDTSwitch

Description TheHWS453isaGaAsPHEMTMMICDPDTswitchoperatingatDC-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS453featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinIEEE802.11a/b/gWLANsy

HWHexawave, Inc

漢威光電股份有限公司

IRF453

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF453

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP453

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP453

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP453

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFP453R

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS453

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISCNL453W

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

L453GD

T-13/4SOLIDSTATELAMPS

Description TheHighEfficiencyRedsourcecolordevicesaremadewithGalliumArsenidePhosphideonGalliumPhosphideOrangeLightEmittingDiode. TheGreensourcecolordevicesaremadewithGalliumPhosphideGreenLightEmittingDiode. TheYellowsourcecolordevicesaremadewithGalliumAr

Kingbright

Kingbright Company LLC

L453ID

T-13/4SOLIDSTATELAMPS

Description TheHighEfficiencyRedsourcecolordevicesaremadewithGalliumArsenidePhosphideonGalliumPhosphideOrangeLightEmittingDiode. TheGreensourcecolordevicesaremadewithGalliumPhosphideGreenLightEmittingDiode. TheYellowsourcecolordevicesaremadewithGalliumAr

Kingbright

Kingbright Company LLC

L453YD

T-13/4SOLIDSTATELAMPS

Description TheHighEfficiencyRedsourcecolordevicesaremadewithGalliumArsenidePhosphideonGalliumPhosphideOrangeLightEmittingDiode. TheGreensourcecolordevicesaremadewithGalliumPhosphideGreenLightEmittingDiode. TheYellowsourcecolordevicesaremadewithGalliumAr

Kingbright

Kingbright Company LLC

LF453

LF453Wide-BandwidthDualJFET-InputOperationalAmplifiers

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LF453CM

LF453Wide-BandwidthDualJFET-InputOperationalAmplifiers

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LN453YP

3.7mmSeries

PanasonicPanasonic Semiconductor

松下松下電器

LVA453A

SHARPBREAKDOWN,LOWLEAKAGELVAREGULATORDIODES

SHARPBREAKDOWN,LOWLEAKAGELVAREGULATORDIODES ?Sharperbreakdownvoltage ?Lowerleakagecurrentcharacteristicsinthe5–9voltrange

KNOX

Knox Semiconductor, Inc

詳細參數(shù)

  • 型號:

    FXT453

  • 功能描述:

    兩極晶體管 - BJT -

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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更多FXT453供應(yīng)商 更新時間2024-12-23 16:06:00