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G2009G

Marking:G2009G;Package:TO-252;N-Channel Enhancement Mode Power MOSFET

Description TheG2009Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200N06K

Marking:G200N06;Package:TO-252;N-Channel Enhancement Mode Power MOSFET

Description TheG200N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200N10K

Marking:G200N10;Package:TO-252;N-Channel Enhancement Mode Power MOSFET

Description TheG200N10Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200P04D3

Marking:G200P04;Package:DFN3X3-8L;P-Channel Enhancement Mode Power MOSFET

Description TheG200P04D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200P04D3A

Marking:G200P04;Package:DFN3X3-8L;P-Channel Enhancement Mode Power MOSFET

Description TheG200P04D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200P04S2

Marking:G200P04S2;Package:SOP-8DUAL;Dual P-Channel Enhancement Mode Power MOSFET

Description TheG200P04S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G2012

Marking:G2012;Package:DFN2/2-6L;N-Channel Enhancement Mode Power MOSFET

Description TheG2012usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ?Powerswitch ?DC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G2012A

Marking:G2012;Package:DFN2/2-6L;N-Channel Enhancement Mode Power MOSFET

Description TheG2012AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ?Powerswitch ?DC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G2014

Marking:N2014;Package:DFN2/2;N-Channel Enhancement Mode Power MOSFET

Description TheG2014usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ?Powerswitch ?DC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G2014A

Marking:N2014;Package:DFN2/2;N-Channel Enhancement Mode Power MOSFET

Description TheG2014Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ?Powerswitch ?DC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

晶體管資料

  • 型號(hào):

    G20

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

  • 性質(zhì):

    射頻/高頻放大 (HF)_靜噪放大 (LN)_寬頻帶放大

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

  • 最大耗散功率:

    0.625W

  • 放大倍數(shù):

  • 圖片代號(hào):

    A-11

  • vtest:

    0

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.625

詳細(xì)參數(shù)

  • 型號(hào):

    G20

  • 制造商:

    VPC

  • 制造商全稱(chēng):

    VPC

  • 功能描述:

    Protective Cover, G20, Receiver

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
XP Power
24+
N/A
12000
一級(jí)代理保證進(jìn)口原裝正品假一罰十價(jià)格合理
詢價(jià)
WESTCODE
23+
模塊
900
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
詢價(jià)
FSC
23+
TO3P
9526
詢價(jià)
哈里斯
06+
TO-247
3500
原裝
詢價(jià)
H
24+
TO247
3000
詢價(jià)
VISHAY
24+/25+
343
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢價(jià)
NVIDIA
08+
BGA
1
詢價(jià)
INF
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價(jià)
哈里斯
23+
TO-247
3000
全新原裝
詢價(jià)
MNC
2016+
DIP20
8850
只做原裝,假一罰十,公司專(zhuān)營(yíng)變壓器,濾波器!
詢價(jià)
更多G20供應(yīng)商 更新時(shí)間2025-4-4 16:26:00