G30N60中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
G30N60規(guī)格書詳情
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
Features
? 63A, 600V at TC= 25°C
? Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
?
產(chǎn)品屬性
- 型號：
G30N60
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SEC |
23+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
INTERSIL |
23+ |
TO247 |
9526 |
詢價 | |||
H |
24+ |
TO247 |
3000 |
詢價 | |||
FAIRCHILD/仙童 |
22+ |
0646 |
43289 |
原裝正品現(xiàn)貨 |
詢價 | ||
仙童FSC |
19+ |
TO-3P |
72075 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | ||
Infineon(英飛凌) |
23+ |
標準封裝 |
7000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
仙童Fairchild/FSC |
21+ |
TO247 |
12588 |
原裝現(xiàn)貨,量大可定 |
詢價 | ||
原廠 |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價 | ||
17 |
24+ |
TO-220 |
144 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
INFINEO |
2020+ |
TO-247 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |
