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G30N60中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

G30N60
廠商型號(hào)

G30N60

功能描述

600V, SMPS Series N-Channel IGBT with

文件大小

191.86 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-22 23:00:00

G30N60規(guī)格書詳情

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode

used in anti-parallel is the development type TA49373.

Features

? >100kHz Operation At 390V, 30A

? 200kHz Operation At 390V, 18A

? 600V Switching SOA Capability

? Typical Fall Time . . . . . . . . . . . . . . . . . 60ns at TJ= 125°C

? Low Conduction Loss

? Temperature Compensating SABER? Model www.fairchildsemi.com

產(chǎn)品屬性

  • 型號(hào):

    G30N60

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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H
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