G60H65DFB中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop

structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Features

? Maximum junction temperature: TJ = 175 °C

? High speed switching series

? Minimized tail current

? Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A

? Tight parameter distribution

? Safe paralleling

? Positive VCE(sat) temperature coefficient

? Low thermal resistance

? Very fast soft recovery antiparallel diode

Applications

? Photovoltaic inverters

? High-frequency converters