G7N60C3D中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

General Description

The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features

? 14A, 600V at TC = 25°C

? 600V Switching SOA Capability

? Typical Fall Time...................140ns at TJ = 150°C

? Short Circuit Rating

? Low Conduction Loss

? Hyperfast Anti-Parallel Diode