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GA200SA60S

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda

IRF

International Rectifier

GA200SA60S

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda

IRF

International Rectifier

GA200SA60S

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES ?Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200SA60S

包裝：托盤 封裝/外殼：SOT-227-4，miniBLOC 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - IGBT - 模塊 描述：IGBT MOD 600V 200A 630W SOT227B

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

GA200SA60SP

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda

IRF

International Rectifier

GA200SA60SP

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES ?Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200SA60SP

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES ?Standard:Optimizedforminimumsaturation voltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?ComplianttoRoHSdirective

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200SA60SP_V01

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES ?Standard:Optimizedforminimumsaturation voltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?ComplianttoRoHSdirective

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200SA60U

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforminimumsaturationvoltageandoperatingfrequenciesupto40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?Fullyisolatepackage(2,500VoltAC/RMS) ?Verylowinternalinductance(≤5nHtyp.) ?

IRF

International Rectifier

GA200SA60UP

InsulatedGateBipolarTransistor(UltrafastSpeedIGBT),100A

FEATURES ?Ultrafast:Optimizedforminimumsaturationvoltageandspeedupto40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?Fullyisolatepackage(2500VAC/RMS) ?Verylowinternalinductance(≤5nHtypical) ?Industrystandardo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SD200SA60A

SILICONSCHOTTKYRECTIFIERDIEVeryLowForwardVoltageDrop(150?CTJOperation)

SENSITRON

SENSITRON SEMICONDUCTOR

SD200SA60B

SILICONSCHOTTKYRECTIFIERDIE

UltralowReverseLeakageCurrent SoftReverseRecoveryatLowandHighTemperature VeryLowForwardVoltageDrop LowPowerLoss,HighEfficiency HighSurgeCapacity GuardRingforEnhancedDurabilityandLongTermReliability GuaranteedReverseAvalancheCharacteristics Electrically/Mech

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

SD200SA60B

SILICONSCHOTTKYRECTIFIERDIEVeryLowForwardVoltageDrop(150?CTJOperation)

SENSITRON

SENSITRON SEMICONDUCTOR

SD200SA60C

SILICONSCHOTTKYRECTIFIERDIEVeryLowForwardVoltageDrop(150?CTJOperation)

SENSITRON

SENSITRON SEMICONDUCTOR

VS-GA200SA60UP

InsulatedGateBipolarTransistor(UltrafastSpeedIGBT),100A

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VS-GT200SA60UP

InsulatedGateBipolarTransistor(TrenchIGBT),200A

FEATURES ?TrenchIGBTtechnologywithpositive temperaturecoefficient ?SquareRBSOA ?5μsshortcircuitcapability ?TJmaximum=175°C ?Fullyisolatedpackage ?Verylowinternalinductance(≤5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?Materialcategoriz

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VS-GT200SA60UP

InsulatedGateBipolarTransistor(TrenchIGBT),200AS

FEATURES ?TrenchIGBTtechnologywithpositive temperaturecoefficient ?SquareRBSOA ?5μsshortcircuitcapability ?TJmaximum=175°C ?Fullyisolatedpackage ?Verylowinternalinductance(≤5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?Materialcategoriz

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    GA200SA60S

  • 制造商：

    Vishay General Semiconductor - Diodes Division

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - IGBT - 模塊

  • 包裝：

    托盤

  • 配置：

    單路

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    1.3V @ 15V，100A

  • 輸入：

    標(biāo)準(zhǔn)

  • NTC 熱敏電阻：

    無

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    底座安裝

  • 封裝/外殼：

    SOT-227-4，miniBLOC

  • 供應(yīng)商器件封裝：

    SOT-227B

  • 描述：

    IGBT MOD 600V 200A 630W SOT227B

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
 詢價(jià)
IR
16+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
INFINEON
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
VishaySemiconductorDiode
23+
IGBTSTD600V100ASOT227
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
IR
24+
模塊
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
IR
23+
200A600V
120
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號(hào)增稅票
 詢價(jià)
IR
18+
MODULE
2173
公司大量全新正品 隨時(shí)可以發(fā)貨
 詢價(jià)
IR
18+
MODULE
100
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
更多GA200SA60S供應(yīng)商 更新時(shí)間2024-12-22 17:06:00

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