GAL18V10B-7LJ中文資料萊迪思數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar counterparts. The E2 technology offers high speed (

Features

? HIGH PERFORMANCE E2CMOS?TECHNOLOGY

— 7.5 ns Maximum Propagation Delay

— Fmax = 111 MHz

— 5.5 ns Maximum from Clock Input to Data Output

— TTL Compatible 16 mA Outputs

— UltraMOS? Advanced CMOS Technology

? LOW POWER CMOS

— 75 mA Typical Icc

? ACTIVE PULL-UPS ON ALL PINS

? E2CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100 Tested/100 Yields

— High Speed Electrical Erasure (<100ms)

— 20 Year Data Retention

? TEN OUTPUT LOGIC MACROCELLS

— Uses Standard 22V10 Macrocell Architecture

— Maximum Flexibility for Complex Logic Designs

? PRELOAD AND POWER-ON RESET OF REGISTERS

— 100 Functional Testability

? APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

? ELECTRONIC SIGNATURE FOR IDENTIFICATION