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GAL22V10B-10LJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-10LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-15LJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-15LJI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-15LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-15QJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-20LJI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-20LPI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-25LJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-25LJI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-25LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-25LPI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-25QJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-25QP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-7LJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-7LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

GAL22V10B-7LPI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

萊迪思萊迪思半導體

詳細參數(shù)

  • 型號:

    GAL22V10B

  • 制造商:

    Lattice Semiconductor Corporation

供應商型號品牌批號封裝庫存備注價格
LATTICE
19+
DIP
15876
詢價
LATTICE
最新
1000
原裝正品現(xiàn)貨
詢價
Lattice(萊迪斯)
23+
特價
6000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
LATTIC
24+
DIP
4000
原裝原廠代理 可免費送樣品
詢價
LATTICE
24+
DIP
8000
只做原裝正品現(xiàn)貨
詢價
LATTIC
2023+
DIP
3500
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價
LAT
05+
原廠原裝
4304
只做全新原裝真實現(xiàn)貨供應
詢價
LATTICE
2022
DIP
6
原廠原裝正品,價格超越代理
詢價
LATTICE
2016+
DIP24
5562
只做進口原裝現(xiàn)貨!或訂貨!假一賠十!
詢價
LATTICE
24+
DIP
9
詢價
更多GAL22V10B供應商 更新時間2024-10-23 16:04:00