首頁 >GAL22V10D-25LPI>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
GAL22V10D-25LPI | Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | |
GAL22V10D-25LPI | GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | |
GAL22V10D-25LPI | High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | |
GAL22V10D-25LPI | All Devices Discontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | |
GAL22V10D-25LPI | All Devices Discontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | |
GAL22V10D-25LPI | 包裝：散裝 封裝/外殼：24-DIP（0.300"，7.62mm） 類別：集成電路（IC） CPLD（復(fù)雜可編程邏輯器件） 描述：IC CPLD 10MC 25NS 24DIP | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | |
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 萊迪思萊迪思半導(dǎo)體 | Lattice |
產(chǎn)品屬性
- 產(chǎn)品編號：
GAL22V10D-25LPI
- 制造商：
Lattice Semiconductor Corporation
- 類別：
集成電路（IC） > CPLD（復(fù)雜可編程邏輯器件）
- 系列：
GAL?22V10
- 包裝：
散裝
- 可編程類型：
EE PLD
- 供電電壓 - 內(nèi)部：
4.5V ~ 5.5V
- 工作溫度：
-40°C ~ 85°C（TA）
- 安裝類型：
通孔
- 封裝/外殼：
24-DIP（0.300"，7.62mm）
- 供應(yīng)商器件封裝：
24-PDIP
- 描述：
IC CPLD 10MC 25NS 24DIP
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
LATTICE |
18+ |
PDIP |
60 |
現(xiàn)貨正品專供軍研究院 |
詢價(jià) | ||
LATTICE |
23+ |
DIP |
4800 |
主營LATTICE一級代理公司現(xiàn)貨原裝實(shí)單必成 |
詢價(jià) | ||
Lattice |
24+ |
DIP-24 |
19 |
詢價(jià) | |||
LATTICE |
22+ |
DIP16 |
2200 |
絕對原裝!真實(shí)庫存! |
詢價(jià) | ||
LATTICE |
17+ |
DIP |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
LATTICE |
0148+ |
DIP24 |
1000 |
全新原裝現(xiàn)貨特價(jià)! |
詢價(jià) | ||
Lattice |
2015+ |
DIP |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
LATTICE |
23+ |
DIP24 |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
LATTICE |
23+ |
DIP24 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
2020+ |
240 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) |
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