GAN039-650NTB中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted

package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT

H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and

performance.

2. Features and benefits

? Simplified driver design as standard level MOSFET gate drivers can be used:

? 0 V to 12 V drive voltage

? Gate threshold voltage VGSth of 4 V

? Robust gate oxide with ±20 V VGS rating

? High gate threshold voltage of 4 V for gate bounce immunity

? Low body diode Vf for reduced losses and simplified dead-time adjustments

? Transient over-voltage capability for increased robustness

? CCPAK package technology:

? Improved reliability, with reduced Rth(j-mb) for optimal cooling

? Lower inductances for lower switching losses and EMI

? 175 °C maximum junction temperature

? High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike

traditional QFN packages

? Visual (AOI) soldering inspection, no need for expensive x-ray equipment

? Easy solder wetting for good mechanical solder joints

3. Applications

? Hard and soft switching converters for industrial and datacom power

? Bridgeless totempole PFC

? PV and UPS inverters

? Servo motor drives