GB75DA120UP

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

FEATURES ?NPTGenerationVIGBTtechnology ?SquareRBSOA ?HEXFRED?lowQrr,lowswitchingenergy ?PositiveVCE(on)temperaturecoefficient ?Fullyisolatedpackage ?Speed8kHzto60kHz ?Verylowinternalinductance(?5nHtypical) ?Industrystandardoutline

GB7NB60KD

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

GB7NC60HD

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

GB70LA60UF

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

GB70LA60UF_13

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

GB70NA60UF

High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

GB70NA60UF_13

High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

GB75YF120N

IGBT FOUR PAK MODULE

GB75YF120UT

IGBT Fourpack Module, 75 A