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GBJA2008

20AmpGlassPassivatedBridgeRectifier50to1000Volts

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

GBJ-KBJ2008

SINGLEPHASE20AMPS.GLASSPASSIVATEDBRIDGERECTIFIERS

YANGJIEYangzhou yangjie electronic co., ltd

揚州揚杰電子揚州揚杰電子科技股份有限公司

GBJL2008

20AmpGlassPassivatedBridgeRectifier50to1000Volts

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

GBU2008

Voltage50V~1000V20AmpGlassPassivatedBridgeRectifiers

FEATURES ?Io:20A ?VRRM:50~1000V ?Glasspassivatedchip ?Highsurgeforwardcurrentcapability APPLICATIONS ?Generalpurpose1phaseBridgerectifierapplications

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

GBU2008

GlassPassivatedBridgeRectifiers

Features ●Glasspassivatedchip ●Lowforwardvoltagedrop ●Idealforprintedcircuitboard ●Highsurgecurrentcapability ●MeetULflammabilityclassification94V-0 Applications ●GeneralpurposeuseinAC/DCbridgefullwaverectification,forSMPS,lightingballaster,adapter,etc.

HY

HY ELECTRONIC CORP.

GBU2008

20AGLASSPASSIVATEDBRIDGERECTIFIERReverse

Voltage-100to1000V ForwardCurrent–20A FEATURES ?Surgeoverloadrating-240amperespeak ?Polarity:Asmarkedonbody ?Idealforprintedcircuitboard ?PlasticmaterialhasU/L Theflammabilityclassification94V-0 ?Reliablelowcostconstructionutilizingmoldedplastic t

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

GBU2008

BarrierRectifier

■Features ●Io20A ●VRRM50V~1000V ●Glasspassivatedchip ●Highsurgeforwardcurrentcapability ■Applications ●Generalpurpose1phaseBridgerectifierapplications

FORMOSAFormosa MS

美麗微半導體美麗微半導體股份有限公司

GBU2008

BridgeRectifiers

ULrecognition,file#£230084 Glasspassivatedchipjunction| Idealforprintedcitboards| Highsurgecurrencapabilly| Solderdip275°Cmax.7s,perJESD22-8106

RFERFE international

RFE國際公司RFE國際股份有限公司

GBU2008A

BridgeRectifiers

Features ULrecognition,file#£230084 Glasspassivatedchipjunction Idealforprintedcircuitboards Highsurgecurrentcapabilty Solderdip275°Cmax.7s,perJESD22-8106

RFERFE international

RFE國際公司RFE國際股份有限公司

GS2008HE

SURFACEMOUNTRECTIFIER

PANJITPan Jit International Inc.

強茂股份有限公司

GTL2008

12-bitGTLtoLVTTLtranslatorwithpowergoodcontrolandhigh-impedanceLVTTLandGTLoutputs

Generaldescription TheGTL2008/GTL2107isacustomizedtranslatorbetweendualXeonprocessors,PlatformHealthManagement,SouthBridgeandPowerSupplyLVTTLandGTLsignals. Features ■OperatesasaGTLtoLVTTLsamplingreceiverorLVTTLtoGTLdriver ■EN1andEN2disableerroroutput ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

GTL2008

12-bitGTLtoLVTTLtranslatorwithpowergoodcontrolandhigh-impedanceLVTTLandGTLoutputs

Generaldescription TheGTL2008isacustomizedtranslatorbetweendualXeonprocessors,PlatformHealthManagement,SouthBridgeandPowerSupplyLVTTLandGTLsignals. Featuresandbenefits ■OperatesasaGTLtoLVTTLsamplingreceiverorLVTTLtoGTLdriver ■OperatesatGTL?/GTL/GTL+sign

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GTL2008PW

12-bitGTLtoLVTTLtranslatorwithpowergoodcontrolandhigh-impedanceLVTTLandGTLoutputs

Generaldescription TheGTL2008/GTL2107isacustomizedtranslatorbetweendualXeonprocessors,PlatformHealthManagement,SouthBridgeandPowerSupplyLVTTLandGTLsignals. Features ■OperatesasaGTLtoLVTTLsamplingreceiverorLVTTLtoGTLdriver ■EN1andEN2disableerroroutput ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

GTL2008PW

12-bitGTLtoLVTTLtranslatorwithpowergoodcontrolandhigh-impedanceLVTTLandGTLoutputs

Generaldescription TheGTL2008isacustomizedtranslatorbetweendualXeonprocessors,PlatformHealthManagement,SouthBridgeandPowerSupplyLVTTLandGTLsignals. Featuresandbenefits ■OperatesasaGTLtoLVTTLsamplingreceiverorLVTTLtoGTLdriver ■OperatesatGTL?/GTL/GTL+sign

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

H2008

10/100BASE-TXVoIPMagneticsModules

pulse

Pulse A Technitrol Company

H2008NL

10/100BASE-TXVoIPMagneticsModules

pulse

Pulse A Technitrol Company

H2008NL

PowerOVEREthernet(PoE)Magneticsand(PoE)Magnetics

pulse

Pulse A Technitrol Company

H2008NL

RoHSpeakreflowtemperaturerating245C

pulse

Pulse A Technitrol Company

H2008NLT

10/100BASE-TXVoIPMagneticsModules

pulse

Pulse A Technitrol Company

HAF2008

SILICONNCHANNELMOSFETSERIESPOWERSWITCHING

ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt

HitachiHitachi Semiconductor

日立日立公司

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更多GBJ2008TB供應商 更新時間2025-1-12 14:13:00