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GD25Q21CUIGT	文件：1.01268 Mbytes Page：51 Pages	Uniform Sector Dual and Quad Serial Flash 1.FEATURES ◆2M-bitSerialFlash -256K-byte -256bytesperprogrammablepage ◆Standard,Dual,QuadSPI -StandardSPI:SCLK,CS#,SI,SO,WP#,HOLD# -DualSPI:SCLK,CS#,IO0,IO1,WP#,HOLD# -QuadSPI:SCLK,CS#,IO0,IO1,IO2,IO3 ◆HighSpeedClockFrequency -104MHzforfastreadwith3	GigaDeviceGigaDevice Semiconductor (Beijing) Inc. 兆易創(chuàng)新北京兆易創(chuàng)新科技股份有限公司	GigaDevice
GD25Q21CUIGY	文件：1.01268 Mbytes Page：51 Pages	UniformSectorDualandQuadSerialFlash 1.FEATURES ◆2M-bitSerialFlash -256K-byte -256bytesperprogrammablepage ◆Standard,Dual,QuadSPI -StandardSPI:SCLK,CS#,SI,SO,WP#,HOLD# -DualSPI:SCLK,CS#,IO0,IO1,WP#,HOLD# -QuadSPI:SCLK,CS#,IO0,IO1,IO2,IO3 ◆HighSpeedClockFrequency -104MHzforfastreadwith3	GigaDeviceGigaDevice Semiconductor (Beijing) Inc. 兆易創(chuàng)新北京兆易創(chuàng)新科技股份有限公司	GigaDevice
P25Q21H	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-NXH-IR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-NXH-IT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-NXH-IW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-NXH-IY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-NXH-KR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-NXH-KT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-NXH-KW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-NXH-KY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SSH-IR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SSH-IT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SSH-IW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SSH-IY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SSH-KR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SSH-KT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SSH-KW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SSH-KY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA
P25Q21H-SUH-IR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司	PUYA

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市亞泰盈科電子有限公司	GD25Q256ABIG	GD		TFBGA24	36800	提供BOM表配單只做原裝貨值得信賴	詢價(jià)
深圳市宇集芯電子有限公司	GD25Q256C	GD	24+	SOP-8/SOP16	90000	一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理	詢價(jià)
深圳市凌旭科技有限公司	GD25Q256CFIG	GD	2016+	SOP8	10000	只做原裝,假一罰十,公司優(yōu)勢(shì)內(nèi)存型號(hào)!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	GD25Q256CFIG	GD	2018+	SOP	6528	承若只做進(jìn)口原裝正品假一賠十!	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	GD25Q256CFIG	GD	2018+	SOP-16	90000	專營(yíng)GigaDevice原裝正品可售樣品	詢價(jià)
深圳市華斯頓科技有限公司	GD25Q256CFIG	GD兆易	22+23+	SOP-8	20578	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	GD25Q256CFIG	GIGADEVICE	20+	SOP16	19570	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市納艾斯科技有限公司	GD25Q256CFIG	GD	2020+	SOP16	80000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳市粵駿騰電子科技有限公司	GD25Q256CFIG	GD/兆易創(chuàng)新	24+	SOP-16	95000	原裝現(xiàn)貨	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	GD25Q256CFIG	GD	21+	SOP16	443	原裝現(xiàn)貨假一賠十	詢價(jià)

更多GD25Q21CUIGT供應(yīng)商更新時(shí)間2024-11-15 14:00:00

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