首頁>GE28F128L18T85>規(guī)格書詳情
GE28F128L18T85中文資料英特爾數據手冊PDF規(guī)格書
GE28F128L18T85規(guī)格書詳情
The Intel StrataFlash? wireless memory (L18) device is the latest generation of Intel StrataFlash? memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.
Product Features
■ High performance Read-While-Write/Erase
— 85 ns initial access
— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ)
— 1.8 V low-power buffered programming at7 μs/byte (Typ)
■ Architecture
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices
— Multiple 16-Mbit partitions: 256-Mbit devices
— Four 16-Kword parameter blocks: top or bottom configurations
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
— Status Register for partition and device status
■ Power
— VCC (core) = 1.7 V - 2.0 V
— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
— Standby current: 30 μA (Typ) for 256-Mbit
— 4-Word synchronous read current: 15 mA (Typ)at 54 MHz
— Automatic Power Savings mode
■ Security
— OTP space:
? 64 unique factory device identifier bits
? 64 user-programmable OTP bits
? Additional 2048 user-programmable OTP bits
— Absolute write protection: VPP = GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■ Software
— 20 μs (Typ) program suspend
— 20 μs (Typ) erase suspend
— Intel? Flash Data Integrator optimized
— Basic Command Set (BCS) and Extended Command Set (ECS) compatible
— Common Flash Interface (CFI) capable
■ Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— ETOX? VIII process technology (0.13 μm)
■ Density and Packaging
— 64-, 128-, and 256-Mbit density in VF BGA packages
— 128/0 and 256/0 density in SCSP
— 16-bit wide data bus
產品屬性
- 型號:
GE28F128L18T85
- 制造商:
INTEL
- 制造商全稱:
Intel Corporation
- 功能描述:
StrataFlash Wireless Memory
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INTEL/英特爾 |
21+ |
BGA |
5000 |
全新原裝現(xiàn)貨 價格優(yōu)勢 |
詢價 | ||
Infineo |
2020+ |
QFN |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INTEL |
2015+ |
SMD/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
INTEL/英特爾 |
22+ |
BGA |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價 | ||
INTEL/英特爾 |
0542+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
INTEL |
23+ |
SMD-BGA56 |
11888 |
專做原裝正品,假一罰百! |
詢價 | ||
Infineon |
0345+ |
QFN |
14 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INTEL/英特爾 |
22+ |
BGA |
9000 |
原裝正品 |
詢價 | ||
INTEL/英特爾 |
22+ |
QFN-8 |
25833 |
鄭重承諾只做原裝進口貨 |
詢價 | ||
INTEL |
23+ |
BGA |
5000 |
原裝正品,假一罰十 |
詢價 |