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GE28F256L18B85中文資料英特爾數(shù)據(jù)手冊PDF規(guī)格書

GE28F256L18B85
廠商型號

GE28F256L18B85

功能描述

StrataFlash Wireless Memory

文件大小

1.69919 Mbytes

頁面數(shù)量

106

生產(chǎn)廠商 Intel Corporation(Integrated Electronics Corporation)
企業(yè)簡稱

Intel英特爾

中文名稱

英特爾(美國科技公司)官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-16 22:59:00

GE28F256L18B85規(guī)格書詳情

The Intel StrataFlash? wireless memory (L18) device is the latest generation of Intel StrataFlash? memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.

Product Features

■ High performance Read-While-Write/Erase

— 85 ns initial access

— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ)

— 1.8 V low-power buffered programming at7 μs/byte (Typ)

■ Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices

— Multiple 16-Mbit partitions: 256-Mbit devices

— Four 16-Kword parameter blocks: top or bottom configurations

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)

— Status Register for partition and device status

■ Power

— VCC (core) = 1.7 V - 2.0 V

— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V

— Standby current: 30 μA (Typ) for 256-Mbit

— 4-Word synchronous read current: 15 mA (Typ)at 54 MHz

— Automatic Power Savings mode

■ Security

— OTP space:

? 64 unique factory device identifier bits

? 64 user-programmable OTP bits

? Additional 2048 user-programmable OTP bits

— Absolute write protection: VPP = GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 μs (Typ) program suspend

— 20 μs (Typ) erase suspend

— Intel? Flash Data Integrator optimized

— Basic Command Set (BCS) and Extended Command Set (ECS) compatible

— Common Flash Interface (CFI) capable

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— ETOX? VIII process technology (0.13 μm)

■ Density and Packaging

— 64-, 128-, and 256-Mbit density in VF BGA packages

— 128/0 and 256/0 density in SCSP

— 16-bit wide data bus

產(chǎn)品屬性

  • 型號:

    GE28F256L18B85

  • 制造商:

    INTEL

  • 制造商全稱:

    Intel Corporation

  • 功能描述:

    StrataFlash Wireless Memory

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