首頁>GE28F640L18T85>規(guī)格書詳情

GE28F640L18T85中文資料英特爾數據手冊PDF規(guī)格書

GE28F640L18T85
廠商型號

GE28F640L18T85

功能描述

StrataFlash Wireless Memory

文件大小

1.69919 Mbytes

頁面數量

106

生產廠商 Intel Corporation
企業(yè)簡稱

Intel英特爾

中文名稱

英特爾官網

原廠標識
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-10 15:02:00

人工找貨

GE28F640L18T85價格和庫存,歡迎聯系客服免費人工找貨

GE28F640L18T85規(guī)格書詳情

The Intel StrataFlash? wireless memory (L18) device is the latest generation of Intel StrataFlash? memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.

Product Features

■ High performance Read-While-Write/Erase

— 85 ns initial access

— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ)

— 1.8 V low-power buffered programming at7 μs/byte (Typ)

■ Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices

— Multiple 16-Mbit partitions: 256-Mbit devices

— Four 16-Kword parameter blocks: top or bottom configurations

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)

— Status Register for partition and device status

■ Power

— VCC (core) = 1.7 V - 2.0 V

— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V

— Standby current: 30 μA (Typ) for 256-Mbit

— 4-Word synchronous read current: 15 mA (Typ)at 54 MHz

— Automatic Power Savings mode

■ Security

— OTP space:

? 64 unique factory device identifier bits

? 64 user-programmable OTP bits

? Additional 2048 user-programmable OTP bits

— Absolute write protection: VPP = GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 μs (Typ) program suspend

— 20 μs (Typ) erase suspend

— Intel? Flash Data Integrator optimized

— Basic Command Set (BCS) and Extended Command Set (ECS) compatible

— Common Flash Interface (CFI) capable

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— ETOX? VIII process technology (0.13 μm)

■ Density and Packaging

— 64-, 128-, and 256-Mbit density in VF BGA packages

— 128/0 and 256/0 density in SCSP

— 16-bit wide data bus

產品屬性

  • 型號:

    GE28F640L18T85

  • 制造商:

    INTEL

  • 制造商全稱:

    Intel Corporation

  • 功能描述:

    StrataFlash Wireless Memory

供應商 型號 品牌 批號 封裝 庫存 備注 價格
INTEL/英特爾
25+
BGA
880000
明嘉萊只做原裝正品現貨
詢價
INTEL
23+
BGA
7520
專注配單,只做原裝進口現貨
詢價
INTEL
2447
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
詢價
Micron
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
INTEL
22+
BGA
2000
絕對進口原裝現貨
詢價
INTEL/英特爾
22+
HSOP28
25833
鄭重承諾只做原裝進口貨
詢價
INTEL/英特爾
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
INTEL
23+
BGA
1
原裝正品現貨
詢價
INTEL
24+
BGA
14
詢價
INTEL/英特爾
09+
BGA
660
原裝現貨
詢價