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HCTS244MS

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS244T

RadiationHardenedOctalBuffer/LineDriver,Three-State

Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

Intersil

Intersil Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

Hittite

Hittite Microwave Corporation

HMC-ALH244

ACTIVEBIASCONTROLLER

GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

IRF244

14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF244

StaticDrain-SourceOn-Resistance

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP244

15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFP244

PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    GFC244

  • 制造商:

    GSG

  • 制造商全稱:

    GSG

  • 功能描述:

    N Channel Power MOSFET with extremely low RDS(on)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
N/A
52000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
OSRAM
2019+
SMD
6000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
OSRAM
ROHS+Original
原廠原封元件
600
原裝現(xiàn)貨 庫存特價(jià)/長期供應(yīng)元器件代理經(jīng)銷
詢價(jià)
OSRAM
20000
詢價(jià)
OSRAM/歐司朗
23+
LED
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
詢價(jià)
OSRAM
2010+
N/A
23
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詢價(jià)
OSRAM
2022+2023+
n/a
600
全新、原裝
詢價(jià)
更多GFC244供應(yīng)商 更新時(shí)間2025-4-17 11:06:00