零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
GJ45N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | |
N-ChannelEnhancement-ModeMOSFET(25V,45A) Features ?RDS(on)=15m?@VGS=10V,ID=25A ?RDS(on)=20m?@VGS=4.5V,ID=25A ?Advancedtrenchprocesstechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?SpeciallyDesignedforDC/DCConvertersandMotorDrivers ?FullyCharacterizedAvalancheVoltageandCurrent ?ImprovedShoo | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHB45N03LTissuppl | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU ??????? APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticsuitableforsurfacemountingenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP45N03LTissuppl | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
30VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@10A | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
45A,30V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs Description TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchi | Intersil Intersil Corporation | Intersil |
詳細參數(shù)
- 型號:
GJ45N03
- 制造商:
GTM
- 制造商全稱:
GTM
- 功能描述:
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
GTM |
23+ |
NA |
39960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
CTM |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CTM |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
CTM |
TO-252 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
CTM |
07+ |
TO-252 |
34380 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
CTM |
23+ |
NA/ |
37630 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
TY |
23+ |
65480 |
詢價 | ||||
XIANYI |
21+ |
標準封裝 |
715 |
進口原裝,訂貨渠道! |
詢價 | ||
GTM |
05+ |
TO252 |
1450 |
詢價 | |||
FOXCONN |
23+ |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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