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GP1200ESM33中文資料Dynex數(shù)據(jù)手冊(cè)PDF規(guī)格書

GP1200ESM33
廠商型號(hào)

GP1200ESM33

功能描述

High Reliability Single Switch IGBT Module Advance Information

文件大小

150.48 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 Dynex Semiconductor
企業(yè)簡(jiǎn)稱

Dynex

中文名稱

Dynex Semiconductor官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-14 11:32:00

GP1200ESM33規(guī)格書詳情

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.

The GP1200ESM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.

FEATURES

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Resonant Converters

產(chǎn)品屬性

  • 型號(hào):

    GP1200ESM33

  • 功能描述:

    IGBT Module

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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