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GP2401ESM18中文資料Dynex數(shù)據(jù)手冊PDF規(guī)格書

GP2401ESM18
廠商型號

GP2401ESM18

功能描述

Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

文件大小

152.98 Kbytes

頁面數(shù)量

9

生產廠商 Dynex Semiconductor
企業(yè)簡稱

Dynex

中文名稱

Dynex Semiconductor官網

原廠標識
數(shù)據(jù)手冊

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更新時間

2025-2-14 11:20:00

GP2401ESM18規(guī)格書詳情

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.

The GP2401ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability.

FEATURES

■ Low VCE(SAT)

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Low-Loss System Retrofits

產品屬性

  • 型號:

    GP2401ESM18

  • 制造商:

    DYNEX

  • 制造商全稱:

    Dynex Semiconductor

  • 功能描述:

    Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

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