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GP401DDM18中文資料Dynex數(shù)據(jù)手冊PDF規(guī)格書

GP401DDM18
廠商型號

GP401DDM18

功能描述

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

文件大小

95.18 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Dynex Semiconductor
企業(yè)簡稱

Dynex

中文名稱

Dynex Semiconductor官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-5 9:28:00

GP401DDM18規(guī)格書詳情

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.

The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability

FEATURES

■ Low VCE(SAT)

■ 400A Per Switch

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability

■ Motor Controllers

■ Traction Drives

■ Low Loss System Retrofit

產(chǎn)品屬性

  • 型號:

    GP401DDM18

  • 制造商:

    DYNEX

  • 制造商全稱:

    Dynex Semiconductor

  • 功能描述:

    Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

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