首頁>GRM155R61A105KE15>規(guī)格書詳情

GRM155R61A105KE15中文資料恩智浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書

GRM155R61A105KE15
廠商型號

GRM155R61A105KE15

功能描述

Heterojunction Bipolar Transistor Technology (InGaP HBT)

文件大小

342.39 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡稱

nxp恩智浦

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-9 19:41:00

GRM155R61A105KE15規(guī)格書詳情

Heterojunction Bipolar Transistor Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMA25312B is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications with frequencies from 2300 to 2700 MHz using simple external matching components with a 3 to 5 V supply.

Features

? Frequency: 2300-2700 MHz

? P1dB: 31 dBm @ 2500 MHz

? Power Gain: 26 dB @ 2500 MHz

? Third Order Output Intercept Point: 40 dBm @ 2500 MHz

? Active Bias Control (On-chip)

? Single 3 to 5 V Supply

? Single-ended Power Detector

? Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package

? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

產(chǎn)品屬性

  • 型號:

    GRM155R61A105KE15

  • 制造商:

    FREESCALE

  • 制造商全稱:

    Freescale Semiconductor, Inc

  • 功能描述:

    Heterojunction Bipolar Transistor Technology(InGaP HBT)

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
muRata/村田
23+
0402
30000
原裝正品公司現(xiàn)貨,假一賠十!
詢價
MURATA
16+
0402C
20000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
MURATA/村田
24+
4880
全新原裝數(shù)量均有多電話咨詢
詢價
MURATA(村田)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
詢價
MURATA
21+
0402
117489
原裝現(xiàn)貨假一賠十
詢價
muRata/村田
21+
0402
10000
全新原裝現(xiàn)貨
詢價
MURATA/村田
22+
SMD
6521
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
MURATA/村田
2022
SMD
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
MURATA ELECTRONICS
22+
SMD
518000
明嘉萊只做原裝正品現(xiàn)貨
詢價
MURATA/村田
22+
SMD
35000
原裝正品
詢價