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GRM155R61A105KE15中文資料恩智浦?jǐn)?shù)據(jù)手冊(cè)PDF規(guī)格書

GRM155R61A105KE15
廠商型號(hào)

GRM155R61A105KE15
功能描述

Heterojunction Bipolar Transistor Technology (InGaP HBT)
文件大小

1.35533 Mbytes
頁(yè)面數(shù)量

28 頁(yè)
生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡(jiǎn)稱

nxp【恩智浦】

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)
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更新時(shí)間

2025-2-10 15:58:00

GRM155R61A105KE15規(guī)格書詳情

Heterojunction Bipolar Transistor Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBeeR at operating voltages from 3 to 5 Volts.

? Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 74 mA

Features

? Frequency: 400-1000 MHz

? P1dB: 29.6 dBm @ 900 MHz

? Power Gain: 31.7 dB @ 900 MHz

? OIP3: 42 dBm @ 900 MHz

? Active Bias Control (adjustable externally)

? Single 3 to 5 V Supply

? Performs Well with Digital Predistortion Systems

? Single-ended Power Detector

? Cost-effective 12-pin, 3 mm QFN Surface Mount Package

? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

產(chǎn)品屬性

  • 型號(hào)：

    GRM155R61A105KE15

  • 制造商：

    FREESCALE

  • 制造商全稱：

    Freescale Semiconductor, Inc

  • 功能描述：

    Heterojunction Bipolar Transistor Technology(InGaP HBT)

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
MURATA/村田
21+
0402
88000
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
 詢價(jià)
MURATA(村田)
23+
標(biāo)準(zhǔn)封裝
20000
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MURATA
22+23+
0402105K10VX5R
25231
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
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MURATA
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
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MURATA
21+
SMD
12588
原裝正品,自己庫(kù)存 假一罰十
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muRata/村田
23+
0402
30000
原裝正品公司現(xiàn)貨,假一賠十!
 詢價(jià)
MURATA(村田)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
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MURATA
24+
原廠原裝
1000
原裝正品
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muRata/村田
2021+
0402
7600
原裝現(xiàn)貨，歡迎詢價(jià)
 詢價(jià)
NA
19+
72385
原廠代理渠道,每一顆芯片都可追溯原廠；
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