GS-065-008-6-L-MR中文資料GAN數(shù)據(jù)手冊(cè)PDF規(guī)格書

Features

? 700 V enhancement mode power transistor

? 850 V transient drain-to-source voltage

? Bottom-cooled, small 5x6 mm PDFN package

? RDS(on) = 165 m?

? IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A

? Ultra-low FOM

? Simple gate drive requirements (0 V to 6 V)

? Transient tolerant gate drive (-20 V / +10 V)

? High switching frequency (> 1 MHz)

? Fast and controllable fall and rise times

? Reverse conduction capability

? Zero reverse recovery loss

? Source Sense (SS) pin for optimized gate drive

? RoHS 3 (6+4) compliant

Applications

? Power Adapters

? LED Lighting Drivers

? Fast Battery Charging

? Power Factor Correction

? Appliance Motor Drives

? Wireless Power Transfer

? Industrial Power Supplies

Description

The GS-065-008-6-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN

allow for high current, high voltage breakdown and

high switching frequency. GaN Systems innovates

with industry leading advancements such as

patented Island Technology? cell layout which

realizes high-current die and high yield. The GS065-008-6-L is a bottom-side cooled transistor that

offers very low junction-to-case thermal resistance

for demanding high power applications. These

features combine to provide very high efficiency

power switching.