GS61008P中文資料GAN數(shù)據(jù)手冊PDF規(guī)格書

Features

? 100 V enhancement mode power transistor

? Bottom-side cooled configuration

? RDS(on) = 7 mΩ

? IDS(max) = 90 A

? Ultra-low FOM die

? Low inductance GaNPX? package

? Simple gate drive requirements (0 V to 6 V)

? Transient tolerant gate drive (-20 V / +10 V)

? Very high switching frequency (> 10 MHz)

? Fast and controllable fall and rise times

? Reverse current capability

? Zero reverse recovery loss

? Small 7.6 x 4.6 mm2 PCB footprint

? Source Sense (SS) pin for optimized gate drive

? RoHS 3 (6 + 4) compliant

Applications

? Energy Storage Systems

? AC-DC Converters (secondary side)

? Uninterruptable Power Supplies

? Industrial Motor Drives

? Fast Battery Charging

? Class D Audio amplifiers

? Traction Drive

? Robotics

? Wireless Power Transfer

Description

The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology? and GaNPX? packaging. Island Technology? cell layout realizes high-current die and high yield. GaNPX? packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.