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GS66508B中文資料GAN數(shù)據(jù)手冊(cè)PDF規(guī)格書

GS66508B
廠商型號(hào)

GS66508B

功能描述

Bottom-side cooled 650 V E-mode GaN transistor

文件大小

982.54 Kbytes

頁面數(shù)量

16

生產(chǎn)廠商 GaN Systems
企業(yè)簡(jiǎn)稱

GAN

中文名稱

GaN Systems官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-4 11:16:00

GS66508B規(guī)格書詳情

Features

? 650 V enhancement mode power transistor

? Bottom-side cooled configuration

? RDS(on) = 50 mΩ

? IDS(max) = 30 A

? Ultra-low FOM die

? Low inductance GaNPX? package

? Simple gate drive requirements (0 V to 6 V)

? Transient tolerant gate drive (-20 V / +10 V)

? Very high switching frequency (> 10 MHz)

? Fast and controllable fall and rise times

? Reverse conduction capability

? Zero reverse recovery loss

? Small 7.0 x 8.4 mm2 PCB footprint

? Source Sense (SS) pin for optimized gate drive

? RoHS 3 (6+4) compliant

Applications

? AC-DC Converters

? DC-DC Converters

? Bridgeless Totem Pole PFC

? Inverters

? Energy Storage Systems

? On Board Battery Chargers

? Uninterruptable Power Supplies

? Solar Energy

? Industrial Motor Drives

? Appliances

? Laser Drivers

? Wireless Power Transfer

Description

The GS66508B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology? and GaNPX? packaging. Island Technology? cell layout realizes high-current die and high yield. GaNPX? packaging enables low inductance & low thermal resistance in a small package. The GS66508B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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