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GS8161E18BGD-200I

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

FunctionalDescription Applications TheGS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)isa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenow

GSI

GSI Technology

GS8161E18BGD-200IV

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

FunctionalDescription Applications TheGS8161ExxB(T/D)-xxxVisa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsync

GSI

GSI Technology

GS8161E18BGD-200

1Mx18,512Kx36,512Kx3618MbSyncBurstSRAMs

FunctionalDescription Applications TheGS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)isa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenow

GSI

GSI Technology

GS8161E18BGD-200V

1Mx18,512Kx36,512Kx3618MbSyncBurstSRAMs

FunctionalDescription Applications TheGS8161ExxB(T/D)-xxxVisa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsync

GSI

GSI Technology

詳細(xì)參數(shù)

  • 型號(hào)：

    GS8161E18BGD-200I

  • 制造商：

    GSI

  • 制造商全稱：

    GSI Technology

  • 功能描述：

    1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
GSI Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
更多GS8161E18BGD-200I供應(yīng)商 更新時(shí)間2024-11-19 15:00:00

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