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GS8161E18BGD-250V中文資料GSI數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
GS8161E18BGD-250V |
| 功能描述 | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| 文件大小 |
1.39331 Mbytes |
| 頁(yè)面數(shù)量 |
35 頁(yè) |
| 生產(chǎn)廠商 | GSI Technology |
| 企業(yè)簡(jiǎn)稱 |
GSI |
| 中文名稱 | GSI Technology官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-2-25 15:00:00 |
| 人工找貨 | GS8161E18BGD-250V價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
相關(guān)芯片規(guī)格書
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- GS8161E18BD-250I
- GS8161E18BD-200V
- GS8161E18BGD-200V
- GS8161E18BGD-250IV
GS8161E18BGD-250V規(guī)格書詳情
Functional Description
Applications
The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Features
? FT pin for user-configurable flow through or pipeline operation
? Dual Cycle Deselect (DCD) operation
? IEEE 1149.1 JTAG-compatible Boundary Scan
? 1.8 V or 2.5 V core power supply
? 1.8 V or 2.5 V I/O supply
? LBO pin for Linear or Interleaved Burst mode
? Internal input resistors on mode pins allow floating mode pins
? Default to Interleaved Pipeline mode
? Byte Write (BW) and/or Global Write (GW) operation
? Internal self-timed write cycle
? Automatic power-down for portable applications
? JEDEC-standard 100-lead TQFP and 165 BGA packages
? RoHS-compliant 100-lead TQFP and 165 BGA packages available
產(chǎn)品屬性
- 型號(hào)：
GS8161E18BGD-250V
- 制造商：
GSI
- 制造商全稱：
GSI Technology
- 功能描述：
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
