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GS8161E36BGD-250中文資料GSI數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GS8161E36BGD-250
廠商型號(hào)

GS8161E36BGD-250

功能描述

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

文件大小

1.39199 Mbytes

頁(yè)面數(shù)量

35 頁(yè)

生產(chǎn)廠商 GSI Technology
企業(yè)簡(jiǎn)稱

GSI

中文名稱

GSI Technology官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-2 9:02:00

GS8161E36BGD-250規(guī)格書(shū)詳情

Functional Description

Applications

The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features

? FT pin for user-configurable flow through or pipeline operation

? Dual Cycle Deselect (DCD) operation

? IEEE 1149.1 JTAG-compatible Boundary Scan

? 2.5 V or 3.3 V +10/–10 core power supply

? 2.5 V or 3.3 V I/O supply

? LBO pin for Linear or Interleaved Burst mode

? Internal input resistors on mode pins allow floating mode pins

? Default to Interleaved Pipeline mode

? Byte Write (BW) and/or Global Write (GW) operation

? Internal self-timed write cycle

? Automatic power-down for portable applications

? JEDEC-standard 100-lead TQFP package

? RoHS-compliant 100-lead TQFP and 165-bump BGA packages available

產(chǎn)品屬性

  • 型號(hào):

    GS8161E36BGD-250

  • 制造商:

    GSI Technology

  • 功能描述:

    SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 5.5NS/2.5NS 165FBGA - Trays

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