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GS8161E36T-225I中文資料GSI數(shù)據(jù)手冊PDF規(guī)格書

GS8161E36T-225I
廠商型號

GS8161E36T-225I

功能描述

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

文件大小

946.25 Kbytes

頁面數(shù)量

36

生產(chǎn)廠商 GSI Technology
企業(yè)簡稱

GSI

中文名稱

GSI Technology官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-20 17:00:00

GS8161E36T-225I規(guī)格書詳情

Functional Description

Applications

The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features

? FT pin for user-configurable flow through or pipeline operation

? Dual Cycle Deselect (DCD) operation

? IEEE 1149.1 JTAG-compatible Boundary Scan

? 2.5 V or 3.3 V +10/–10 core power supply

? 2.5 V or 3.3 V I/O supply

? LBO pin for Linear or Interleaved Burst mode

? Internal input resistors on mode pins allow floating mode pins

? Default to Interleaved Pipeline mode

? Byte Write (BW) and/or Global Write (GW) operation

? Internal self-timed write cycle

? Automatic power-down for portable applications

? JEDEC-standard 100-lead TQFP and 165-bump BGA packages

產(chǎn)品屬性

  • 型號:

    GS8161E36T-225I

  • 制造商:

    GSI

  • 制造商全稱:

    GSI Technology

  • 功能描述:

    1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

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公司優(yōu)勢庫存 熱賣中!!
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只做進(jìn)口原裝現(xiàn)貨!或者訂貨,假一賠十!
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