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GS816218BGB-150V中文資料GSI數(shù)據(jù)手冊PDF規(guī)格書

GS816218BGB-150V
廠商型號

GS816218BGB-150V

功能描述

1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs

文件大小

1.20405 Mbytes

頁面數(shù)量

31

生產(chǎn)廠商 GSI Technology
企業(yè)簡稱

GSI

中文名稱

GSI Technology官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

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更新時(shí)間

2025-1-23 8:24:00

GS816218BGB-150V規(guī)格書詳情

Functional Description

Applications

The GS8162xxBB-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features

? FT pin for user-configurable flow through or pipeline operation

? Single/Dual Cycle Deselect selectable

? IEEE 1149.1 JTAG-compatible Boundary Scan

? ZQ mode pin for user-selectable high/low output drive

? 1.8 V or 2.5 V +10/–10 core power supply

? LBO pin for Linear or Interleaved Burst mode

? Internal input resistors on mode pins allow floating mode pins

? Default to SCD x18/x36 Interleaved Pipeline mode

? Byte Write (BW) and/or Global Write (GW) operation

? Internal self-timed write cycle

? Automatic power-down for portable applications

? JEDEC-standard 119-bump BGA package

? RoHS-compliant 119-bump BGA package available

產(chǎn)品屬性

  • 型號:

    GS816218BGB-150V

  • 制造商:

    GSI Technology

  • 功能描述:

    SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
GSI Technology
2022+
原廠原包裝
8600
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