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GS816273C-225I中文資料GSI數(shù)據(jù)手冊(cè)PDF規(guī)格書

GS816273C-225I
廠商型號(hào)

GS816273C-225I

功能描述

256K x 72 18Mb S/DCD Sync Burst SRAMs

文件大小

516.21 Kbytes

頁(yè)面數(shù)量

25 頁(yè)

生產(chǎn)廠商 GSI Technology
企業(yè)簡(jiǎn)稱

GSI

中文名稱

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-24 23:21:00

GS816273C-225I規(guī)格書詳情

Functional Description

Applications

The GS816273C is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features

? Single/Dual Cycle Deselect selectable

? IEEE 1149.1 JTAG-compatible Boundary Scan

? ZQ mode pin for user-selectable high/low output drive

? 2.5 or 3.3 V +10/–10 core power supply

? 2.5 V or 3.3 V I/O supply

? LBO pin for Linear or Interleaved Burst mode

? Internal input resistors on mode pins allow floating mode pins

? Byte Write (BW) and/or Global Write (GW) operation

? Internal self-timed write cycle

? Automatic power-down for portable applications

? JEDEC-standard 209-bump BGA package

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