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GS8162Z18B-200中文資料GSI數(shù)據(jù)手冊(cè)PDF規(guī)格書

GS8162Z18B-200
廠商型號(hào)

GS8162Z18B-200

功能描述

18Mb Pipelined and Flow Through Synchronous NBT SRAM

文件大小

1.20057 Mbytes

頁(yè)面數(shù)量

38 頁(yè)

生產(chǎn)廠商 GSI Technology
企業(yè)簡(jiǎn)稱

GSI

中文名稱

GSI Technology官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-24 13:00:00

GS8162Z18B-200規(guī)格書詳情

Functional Description

The GS8162Z18(B/D)/36(B/D)/72(C) is an 18Mbit Synchronous Static SRAM. GSIs NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.

Features

? NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM?, NoBL? and ZBT? SRAMs

? 2.5 V or 3.3 V +10/–10 core power supply

? 2.5 V or 3.3 V I/O supply

? User-configurable Pipeline and Flow Through mode

? ZQ mode pin for user-selectable high/low output drive

? IEEE 1149.1 JTAG-compatible Boundary Scan

? LBO pin for Linear or Interleave Burst mode

? Pin-compatible with 2M, 4M, and 8M devices

? Byte write operation (9-bit Bytes)

? 3 chip enable signals for easy depth expansion

? ZZ Pin for automatic power-down

? JEDEC-standard 119-, 165-, or 209-Bump BGA package

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