GS820E32T-4中文資料etc未分類制造商數(shù)據(jù)手冊PDF規(guī)格書

[GSI]

Functional Description

Applications

The GS820E32 is a 2,097,152 bit high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support.

Features

? FT pin for user configurable flow through or pipelined operation.

? Dual Cycle Deselect (DCD) Operation.

? 3.3V +10/-5 Core power supply

? 2.5V or 3.3V I/O supply.

? LBO pin for linear or interleaved burst mode.

? Internal input resistors on mode pins allow floating mode pins.

? Default to Interleaved Pipelined Mode.

? Byte write (BW) and/or global write (GW) operation.

? Common data inputs and data outputs.

? Clock Control, registered, address, data, and control.

? Internal Self-Timed Write cycle.

? Automatic power-down for portable applications.

? JEDEC standard 100-lead TQFP or QFP package.