GS8324Z18C-250I中文資料GSI數(shù)據(jù)手冊PDF規(guī)格書

Features

? NBT (No Bus Turn Around) functionality allows zero wait

Read-Write-Read bus utilization; fully pin-compatible with

both pipelined and flow through NtRAM?, NoBL? and

ZBT? SRAMs

? FT pin for user-configurable flow through or pipeline operation

? IEEE 1149.1 JTAG-compatible Boundary Scan

? ZQ mode pin for user-selectable high/low output drive

? 2.5 V or 3.3 V +10/–5 core power supply

? 2.5 V or 3.3 V I/O supply

? LBO pin for Linear or Interleaved Burst mode

? Byte Write (BW) and/or Global Write (GW) operation

? Internal self-timed write cycle

? Automatic power-down for portable applications

? JEDEC-standard 119- and 209-bump BGA package

Applications

The GS8324Z18/36/72 is a 37,748,736-bit high performance 2-die

synchronous SRAM module with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache

applications supporting high performance CPUs, the device now

finds application in synchronous SRAM applications, ranging

from DSP main store to networking chip set support.