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GS88236BGB-250V中文資料GSI數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GS88236BGB-250V
廠商型號(hào)

GS88236BGB-250V

功能描述

512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

文件大小

1.43044 Mbytes

頁(yè)面數(shù)量

35 頁(yè)

生產(chǎn)廠商 GSI Technology
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更新時(shí)間

2024-11-18 8:23:00

GS88236BGB-250V規(guī)格書(shū)詳情

Functional Description

Applications

The GS88218/36B(B/D)-xxxV is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features

? FT pin for user-configurable flow through or pipeline operation

? Single/Dual Cycle Deselect selectable

? IEEE 1149.1 JTAG-compatible Boundary Scan

? On-chip read parity checking; even or odd selectable

? ZQ mode pin for user-selectable high/low output drive

? 1.8 V or 2.5 V core power supply

? 1.8 V or 2.5 V I/O supply

? LBO pin for Linear or Interleaved Burst mode

? Internal input resistors on mode pins allow floating mode pins

? Default to SCD x18/x36 Interleaved Pipeline mode

? Byte Write (BW) and/or Global Write (GW) operation

? Internal self-timed write cycle

? Automatic power-down for portable applications

? JEDEC-standard 119- and 165-bump BGA packages

? RoHS-compliant packages available

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