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IRF9630

6.5A,200V,0.800Ohm,P-ChannelPowerMOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF9630

PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A)

IRF

International Rectifier

IRF9630

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9630

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9630

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9630

SEMICONDUCTORS

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etc未分類(lèi)制造商etc2未分類(lèi)制造商

IRF9630

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9630

PowerMOSFETS

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9630PBF

PowerMOSFETS

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9630PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

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GS
35
全新原裝!優(yōu)勢(shì)庫(kù)存熱賣(mài)中!
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GOLDSTAR
02/03+
PLCC28
153
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
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GOLDSTAR
25+
PLCC28
210
⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢(xún)!⊙
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NSC
23+
PLCC-28P
9823
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NSC
24+
PLCC-28P
680
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G
23+
PLCC
1050
專(zhuān)業(yè)優(yōu)勢(shì)供應(yīng)
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GOLDSTAR
24+
PLCC28
2987
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N/A
2023+
PLCC
50000
原裝現(xiàn)貨
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GSTAR
23+
SMD
50000
只做原裝正品
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LGIC
22+
MODOULE
12000
只做原裝、原廠優(yōu)勢(shì)渠道、假一賠十
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更多GS9630JC供應(yīng)商 更新時(shí)間2025-2-28 17:47:00