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BC69-16PA

20V,2APNPmediumpowertransistors

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BC69-16PA

20V,2APNPmediumpowertransistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC69-16PAS

20V,2APNPmediumpowertransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC69-16PAS

20V,2APNPmediumpowertransistors

Featuresandbenefits *Highcollectorcurrentcapability ICandICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BCP69-16

PNPmediumpowertransistor

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES ?Highcurrent(max.1A) ?Lowvoltage(max.20V). APPLICATIONS ?Generalpurposeswitchingandamplification ?Powerapplicationssuchasaudiooutputstages.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BCP69-16

20V,2APNPmediumpowertransistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BCP69-16

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BCP69-16

PNPSiliconAFTransistor

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCP69-16

PNPPlastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BCP69-16

20V,2APNPmediumpowertransistors

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BCP69-16

PNPSiliconAFTransistor(ForgeneralAFapplicationHighcollectorcurrentHighcurrentgain)

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BCP69-16/DG

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BCP69-16/IN

20V,1APNPmediumpowertransistor

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BCP69-16-Q

20V,2APNPmediumpowertransistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinau

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BCX69-16

PNPSiliconAFTransistors

?ForgeneralAFapplications ?Highcollectorcurrent ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Complementarytype:BCX68(NPN) ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCX69-16

PNPSiliconAFTransistors

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

BCX69-16

PNPSiliconAFTransistors

Features ForgeneralAFapplications. Highcollectorcurrent. Highcurrentgain. Lowcollector-emittersaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BCX69-16

PNPSiliconAFTransistors

?ForgeneralAFapplications ?Highcollectorcurrent ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Complementarytype:BCX68(NPN) ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCX69-16

PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrent)

?ForgeneralAFapplications ?Highcollectorcurrent ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Complementarytype:BCX68(NPN)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BCX69-16

PNPSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *Highgainandlowsaturationvoltages COMPLEMENTARYTYPE–BCX68 PARTMARKINGDETAIL–BCX69–CJ BCX69-16–CG BCX69-25–CH

Zetex

Zetex Semiconductors

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Good-Ark Semiconductor
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EUCHNER
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DD
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OGAM
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ST
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ST
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na
80000
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更多GSBCP69-16供應(yīng)商 更新時(shí)間2025-1-8 14:32:00