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GSH10A09B

Schottky Barrier Diode

FEATURES *SimilartoTO-220ABCase *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

AGQ10A09Z

ULTRA-SMALLPACKAGEFLATPOLARIZEDRELAY

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARE10A09NIL

2.6GHzSMALLMICROWAVERELAYS

FEATURES ?Excellenthighfrequencycharacteristics(to2.6GHz) ?Surface-mounttypealsoavailable ?Compactandslimsize Size:20.2(L)×11.2(W)×8.9(H)*mm.795(L)×.441(W)×.350(H)inch *TheheightofSurface-mounttypeis9.6mm.378inchsize. TYPICALAPPLICATIONS 1.Broa

PanasonicPanasonic Semiconductor

松下松下電器

ARE10A09Z

2.6GHzSMALLMICROWAVERELAYS

FEATURES ?Excellenthighfrequencycharacteristics(to2.6GHz) ?Surface-mounttypealsoavailable ?Compactandslimsize Size:20.2(L)×11.2(W)×8.9(H)*mm.795(L)×.441(W)×.350(H)inch *TheheightofSurface-mounttypeis9.6mm.378inchsize. TYPICALAPPLICATIONS 1.Broa

PanasonicPanasonic Semiconductor

松下松下電器

FCH10A09

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ABCase *FullyMoldedIsolation *DualDiodes–CathodeCommon *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

FSH10A09

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ACCase *FullyMoldedIsolation *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

FSH10A09B

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ABCase *FullyMoldedIsolation *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

GCH10A09

SchottkyBarrierDiode

NIEC

Nihon Inter Electronics Corporation

GSH10A09

SchottkyBarrierDiode

FEATURES *SimilartoTO-220ACCase *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation

NIEC

Nihon Inter Electronics Corporation

ZXMN10A09K

100VN-CHANNELENHANCEMENTMODEMOSFETINDPAK

SUMMARY V(BR)DSS=100V:RDS(on)=0.085;ID=7.7A DESCRIPTION ThisnewgenerationofTrenchMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltagepowermanagementapp

Zetex

Zetex Semiconductors

ZXMN10A09K

100VN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETfeatureslowon-resistance,fastswitchingandahighavalanchewithstandcapability,makingitidealforhighefficiencypowermanagementapplications. ?DC-DCConverters ?Powermanagementfunctions ?Disconnectswitches ?Motorcontrol

DIODES

Diodes Incorporated

ZXMN10A09KTC

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ZXMN10A09KTC

100VN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETfeatureslowon-resistance,fastswitchingandahighavalanchewithstandcapability,makingitidealforhighefficiencypowermanagementapplications. ?DC-DCConverters ?Powermanagementfunctions ?Disconnectswitches ?Motorcontrol

DIODES

Diodes Incorporated

ZXMN10A09KTC

100VN-CHANNELENHANCEMENTMODEMOSFETINDPAK

SUMMARY V(BR)DSS=100V:RDS(on)=0.085;ID=7.7A DESCRIPTION ThisnewgenerationofTrenchMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltagepowermanagementapp

Zetex

Zetex Semiconductors

詳細(xì)參數(shù)

  • 型號：

    GSH10A09B

  • 制造商：

    NIEC

  • 制造商全稱：

    Nihon Inter Electronics Corporation

  • 功能描述：

    Schottky Barrier Diode

供應(yīng)商型號品牌批號封裝庫存備注價格
NIEC
24+
TO-220-2pin
8866
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con
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2500
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1432
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146484
ABB GSH202 AC-C32/0.03 SMD 1432
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21+
原廠原封
5000
全新原裝 現(xiàn)貨 價優(yōu)
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Bosch(博世)
21+
NA
4600
中國航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者
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GS
23+
原廠封裝
11888
專做原裝正品,假一罰百!
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GREENCONNTECHNOLOGYCOLTD
22+
NA
30000
100%全新原裝 假一賠十
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GG
23+
2300
全新原裝，歡迎來電咨詢
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格康
NA
16355
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
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更多GSH10A09B供應(yīng)商 更新時間2025-1-13 16:30:00

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