首頁 >GT15Q102(Q)>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SiliconNChannelIGBTHighPowerSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
HighPowerSwitchingApplications DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
詳細(xì)參數(shù)
- 型號:
GT15Q102(Q)
- 功能描述:
IGBT 晶體管 1200V/15A DIS
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
23+ |
TO3P |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TOSHIBA/東芝 |
2022 |
TO3P |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
TOSHIBA/東芝 |
24+ |
TO3P |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
TOSHIBA |
11+ |
244 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
TOSHIBA |
06+ |
TO-247 |
10000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
TOSHIBA |
21+ |
TO-3P |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
TOS |
23+ |
65480 |
詢價 | ||||
TOSHIBA/東芝 |
23+ |
TO-3P(N) |
10000 |
公司只做原裝正品 |
詢價 | ||
TOSHIBA/東芝 |
TO-3P(N) |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
TOS |
TO3P |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 |
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