GTRA214602FC-V1中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書

Description

The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high

electron mobility transistor (HEMT) designed for use in

multi-standard cellular power amplifier applications. It

features input matching, high efficiency, and a thermallyenhanced package with earless flange.

Features

? GaN on SiC HEMT technology

? Input matched

? Asymmetric Doherty design

- Main: P3dB = 170 W Typ

- Peak: P3dB = 350 W Typ

? Typical pulsed CW performance: 16 μs pulse width,

10 duty cycle, 2140 MHz, 48 V, Doherty fixture

- Gain = 15 dB @ 49 dBm

- Efficiency = 60 @ 49 dBm

- Output power at P3dB = 490 W

? Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

? Low thermal resistance

? Pb-free and RoHS compliant