GTRA260502M中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書

Description

The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a thermallyenhanced DFN SMD package.

Features

? GaN on SiC HEMT technology

? Typical pulsed CW performance: 10 μs pulse width,

10 duty cycle, 2690 MHz, 48 V, Doherty configuration

- Efficiency = 64

- Output power at P3dB = 50 W

? Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

? Low thermal resistance

? Pb-free and RoHS compliant