GVT7164C18中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

Functional Description

The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

Features

? Fast access times: 5, 6, 7, and 8 ns

? Fast clock speed: 100, 83, 66, and 50 MHz

? Provide high-performance 3-1-1-1 access rate

? Fast OE access times: 5 and 6 ns

? Optimal for performance (two cycle chip deselect, depth expansion without wait state)

? Single +3.3V –5 to +10 power supply

? 5V tolerant inputs except I/Os

? Clamp diodes to VSSQ at all inputs and outputs

? Common data inputs and data outputs

? Byte Write Enable and Global Write control

? Three chip enables for depth expansion and address pipeline

? Address, control, input, and output pipeline registers

? Internally self-timed Write Cycle

? Write pass-through capability

? Burst control pins (interleaved or linear burst sequence)

? Automatic power-down for portable applications

? High-density, high-speed packages

? Low capacitive bus loading

? High 30-pF output drive capability at rated access time