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GWT60V60DF中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

GWT60V60DF
廠商型號

GWT60V60DF

功能描述

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

文件大小

1.62941 Mbytes

頁面數(shù)量

20

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體(ST)集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-10-24 10:34:00

GWT60V60DF規(guī)格書詳情

Features

? Maximum junction temperature: TJ = 175 °C

? Tail-less switching off

? VCE(sat) = 1.85 V (typ.) @ IC = 60 A

? Tight parameter distribution

? Safe paralleling

? Low thermal resistance

? Very fast soft recovery antiparallel diode

Applications

? Photovoltaic inverters

? Uninterruptible power supply

? Welding

? Power factor correction

? Very high frequency converters

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the V series

of IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of very high

frequency converters. Furthermore, a positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

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