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H3101B

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

Intersil

Intersil Corporation

HCPL-3101

PowerMOSFET/IGBTGateDriveOptocouplers

Description TheHCPL-3100/3101consistsofanLED*opticallycoupledtoanintegratedcircuitwithapoweroutputstage.TheseoptocouplersaresuitedfordrivingpowerMOSFETsandIGBTsusedinmotorcontrolinverterapplications.Thehighoperatingvoltagerangeoftheoutputstageprovidesthe

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

HCPL-3101

PowerMOSFET/IGBTGateDriveOptocouplersUninterruptablepowersupply

Description TheHCPL-3100/3101consistsofanLED*opticallycoupledtoanintegratedcircuitwithapoweroutputstage.TheseoptocouplersaresuitedfordrivingpowerMOSFETsandIGBTsusedinmotorcontrolinverterapplications.Thehighoperatingvoltagerangeoftheoutputstageprovidesthe

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

HCPL-3101

PowerMOSFET/IGBTGateDriveOptocouplers

Description TheHCPL-3100/3101consistsofanLED*opticallycoupledtoanintegratedcircuitwithapoweroutputstage.TheseoptocouplersaresuitedfordrivingpowerMOSFETsandIGBTsusedinmotorcontrolinverterapplications.Thehighoperatingvoltagerangeoftheoutputstageprovidesthe

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

HCPL-3101

PowerMOSFET/IGBTGateDriveOptocouplers

Description TheHCPL-3100/3101consistsofanLED*opticallycoupledtoanintegratedcircuitwithapoweroutputstage.TheseoptocouplersaresuitedfordrivingpowerMOSFETsandIGBTsusedinmotorcontrolinverterapplications.Thehighoperatingvoltagerangeoftheoutputstageprovidesthe

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

HCPL-3101

PowerMOSFET/IGBTGateDriveOptocouplers

Description TheHCPL-3100/3101consistsofanLED*opticallycoupledtoanintegratedcircuitwithapoweroutputstage.TheseoptocouplersaresuitedfordrivingpowerMOSFETsandIGBTsusedinmotorcontrolinverterapplications.Thehighoperatingvoltagerangeoftheoutputstageprovidesthe

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

HFA3101

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

Intersil

Intersil Corporation

HFA3101

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

Intersil

Intersil Corporation

HFA3101

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HFA3101B

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

Intersil

Intersil Corporation

HFA3101B

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

Intersil

Intersil Corporation

HFA3101B

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HFA3101BZ

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

Intersil

Intersil Corporation

HFA3101BZ

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

Intersil

Intersil Corporation

HFA3101BZ

GilbertCellUHFTransistorArray

TheHFA3101isanallNPNtransistorarrayconfiguredasaMultiplierCell.BasedonIntersil’sbondedwaferUHF-1SOIprocess,thisarrayachievesveryhighfT(10GHz)whilemaintainingexcellenthFEandVBEmatchingcharacteristicsthathavebeenmaximizedthroughcarefulattentiontocircuitde

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HM3101

2A150kHz40VBuckDC/DCConverterWithConstantCurrentLoop

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HO-NP-3101

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆(LEM)集團

HO-P-3101

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆(LEM)集團

HS3101

HighPerformanceRelativeHumidityandTemperatureSensor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS3101

HighPerformanceRelativeHumidityandTemperatureSensor

Features Humidityrange:0to100RH Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) Hydrophobicmembrane,IP67rating 14-bitresolution:0.01RH,typical Independentprogrammableresolutionsettings:8, 10,12,14bits FastRHresponsetime:1secondtimeconstant, typical(w

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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NATIONALC
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NATIONALCHIP
22+
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NATIONALCHIP
23+
NA/
3650
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中科銀河芯
21+
DFN
10
全新原裝鄙視假貨15118075546
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更多GX3101供應商 更新時間2025-1-3 16:40:00