H01N60SI中文資料華昕數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
H01N60SI |
功能描述 | N-Channel Power Field Effect Transistor |
文件大小 |
62.65 Kbytes |
頁面數(shù)量 |
5 頁 |
生產(chǎn)廠商 | Hi-Sincerity Mocroelectronics |
企業(yè)簡稱 |
HSMC【華昕】 |
中文名稱 | 華昕科技有限公司官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-3-16 17:00:00 |
人工找貨 | H01N60SI價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
H01N60SI規(guī)格書詳情
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Features
? 1A, 600V, RDS(on)=12?@VGS=10V
? Low Gate Charge 15nC(Typ.)
? Low Crss 4pF(Typ.)
? Fast Switching
? Improved dv/dt Capability
產(chǎn)品屬性
- 型號:
H01N60SI
- 制造商:
HSMC
- 制造商全稱:
HSMC
- 功能描述:
N-Channel Power Field Effect Transistor
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
華昕 |
09+ |
TO-92 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
MIC |
24+ |
SSOP-16 |
1280 |
詢價(jià) | |||
ROHM |
17+ |
SOT-323 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
ROHM |
16+ |
SOT-323 |
10000 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢! |
詢價(jià) | ||
Telegartner |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
H |
22+ |
TO-252 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
MICR |
2025+ |
SSOP16 |
3750 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
ST |
23+ |
QFP |
8890 |
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
H |
TO-252 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
TELEGARTNER |
24+ |
35200 |
一級代理/放心采購 |
詢價(jià) |