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H03N60

N-Channel Power Field Effect Transistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H03N60E

N-Channel Power Field Effect Transistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H03N60F

N-Channel Power Field Effect Transistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

IKD03N60RF

??C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

RC-DriveandRC-DriveFast

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RFA

OptimizedEon,EoffandQrrforlowswitchinglosses

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILA03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILB03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    H03N60

  • 制造商：

    HSMC

  • 制造商全稱：

    HSMC

  • 功能描述：

    N-Channel Power Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
H
23+
TO-220
10000
公司只做原裝正品
 詢價
H
22+
TO-220
6000
十年配單,只做原裝
 詢價
H
23+
TO-220
6000
原裝正品，支持實單
 詢價
H
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
H
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
華昕
23+
TO220F
28888
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
萬潤
兩年內
NA
985
實單價格可談
 詢價
JST/日壓
22+
連接器
728922
代理-優(yōu)勢-原裝-正品-現(xiàn)貨*期貨
 詢價
ROHM
16+
SOT-23
10000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
ROHM
17+
SOT-23
6200
100%原裝正品現(xiàn)貨
 詢價
更多H03N60供應商 更新時間2025-1-23 14:30:00

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