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H04N60

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H04N60E

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H04N60F

N-Channel Power Field Effect Transistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H04Z-0100J2T-00C36-X

Aluminum Nitride

Feature: ?AlNmaterial ?10Wattpowerhandling ?DC-3GHz GeneralDescription: TheH04Z-0100J2T-00C36-Xisaleaded 1dBattenuatorwithapowerratingof10Wattsmax whilemaintainingabaseplatetemperatureof100°C. ItoffersafrequencyrangefromDC-3GHz.

BARRY

Vishay Barry

H04Z-0200JT-00C36-X

Aluminum Nitride

Feature: ?AlNmaterial ?10Wattpowerhandling ?DC-3GHz GeneralDescription: TheH04Z-0200J2T-00C36-Xisaleaded 2dBattenuatorwithapowerratingof10Wattsmax whilemaintainingabaseplatetemperatureof100°C. ItoffersafrequencyrangefromDC-3GHz.

BARRY

Vishay Barry

H04Z-0300J2T-00C36-X

Aluminum Nitride

Feature: ?AlNmaterial ?10Wattpowerhandling ?DC-3GHz GeneralDescription: TheH04Z-0300J2T-00C36-Xisaleaded 3dBattenuatorwithapowerratingof10Wattsmax whilemaintainingabaseplatetemperatureof100°C. ItoffersafrequencyrangefromDC-3GHz.

BARRY

Vishay Barry

H04Z-0500J2T-00C36-X

Aluminum Nitride

Feature: ?AlNmaterial ?10Wattpowerhandling ?DC-3GHz GeneralDescription: TheH04Z-0500J2T-00C36-Xisaleaded 5dBattenuatorwithaninputpowerof10Wattsmax whilemaintainingabaseplatetemperatureof100°C. ItoffersafrequencyrangefromDC-3GHz.

BARRY

Vishay Barry

H04Z-1000J2T-00C36-X

Aluminum Nitride

Feature: ?AlNmaterial ?10Wattpowerhandling ?DC-3GHz GeneralDescription: TheH04Z-1000J2T-00C36-Xisaleaded 10dBattenuatorwithaninputpowerof10Wattsmax whilemaintainingabaseplatetemperatureof100°C. ItoffersafrequencyrangefromDC-3GHz.

BARRY

Vishay Barry

H04Z-2000J2T-00C36-X

Aluminum Nitride

Feature: ?AlNmaterial ?10Wattpowerhandling ?DC-3GHz GeneralDescription: TheH04Z-2000J2T-00C36-Xisaleaded attenuatorwithapowerratingof10Wattsmaxwhile maintainingabaseplatetemperatureof100°C.It offersafrequencyrangefromDC-3GHz.

BARRY

Vishay Barry

詳細參數(shù)

  • 型號：

    H04

  • 制造商：

    HSMC

  • 制造商全稱：

    HSMC

  • 功能描述：

    N-Channel Power Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
H
23+
TO-220
10000
公司只做原裝正品
 詢價
H
22+
TO-220
6000
十年配單,只做原裝
 詢價
H
23+
TO-220
6000
原裝正品，支持實單
 詢價
H
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
H
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
華昕
21+
TO-220-3
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗
 詢價
華昕
99+
TO-220-3
150
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
華昕
23+24
TO-220F
59630
主營原裝MOS,二三級管,肖特基,功率場效應(yīng)管
 詢價
華昕
23+
TO-220-3
10000
原裝正品現(xiàn)貨
 詢價
HSMC
23+
28988
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多H04供應(yīng)商 更新時間2025-1-18 14:30:00

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